发明名称 |
Nitride semiconductor LED and fabrication method thereof |
摘要 |
Disclosed a nitride semiconductor LED including: a substrate; a GaN-based buffer layer formed on the substrate; AlyGa1-yN/GaN short period superlattice (SPS) layers formed on the GaN-based buffer layer in a sandwich structure of upper and lower parts having an undoped GaN layer or an indium-doped GaN layer interposed therebetween (Here, 0@y@1); a first electrode layer of an n-GaN layer formed on the upper AlyGa1-yN/GaN SPS layer; an active layer formed on the first electrode layer; and a second electrode layer of a p-GaN layer formed on the active layer.
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申请公布号 |
US8492779(B2) |
申请公布日期 |
2013.07.23 |
申请号 |
US20090588033 |
申请日期 |
2009.10.01 |
申请人 |
LEE SUK HUN;LG INNOTEK CO., LTD. |
发明人 |
LEE SUK HUN |
分类号 |
H01L33/00;H01L21/20;H01L33/04;H01L33/12 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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