| 摘要 |
PROBLEM TO BE SOLVED: To provide an exposure method capable of aligning a mask and a work without forming any alignment mark on the work or mask and capable of forming element patterns (chip) as many as possible on the work.SOLUTION: A mask pattern is formed on a mask M to be larger than a conventional mask pattern by one line added outside vertically and horizontally respectively, and an area to be irradiated by exposure light is set to be larger by at least one line of patterns vertically and horizontally according to the mask pattern with respect to a work W. When exposing, a desired pattern in plural patterns repeatedly formed on the mask and a pattern formed at a position corresponding to the pattern on the work W are aligned, and the exposure light larger by one line of the pattern is radiated to the work W through the mask M. With this, even when the position of the work on a work stage WS is displaced to the side by one element, the exposure light through the mask M is radiated over entire area on the work W, and thus element patterns are formed. |
