SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a MOSFET having less contact resistance between drain and source electrodes and a wiring metal.SOLUTION: A semiconductor device comprises: a substrate; semiconductor layers formed on the substrate; first and second electrodes formed on the semiconductor layers; an interlayer insulation film formed above the semiconductor layers and the first and second electrodes; and a protection layer provided between the first electrode and the interlayer insulation film, for protecting the first electrode. The interlayer insulation film is deposited by an atmospheric pressure CVD method. The protection layer prevents oxidization of top faces of the source electrode and the drain electrodes in a deposition process of the interlayer insulation film.