| 摘要 |
PURPOSE: A static random access memory (SRAM) cell and an array thereof are provided to reduce areas for the same on an integrated circuit die while reducing power demand. CONSTITUTION: A SRAM cell comprises two pull up transistors (PU-1, PU-2), two pull down transistors (PD-1, PD-2), and two pass gate transistors (PG-1, PG-2). The pull up transistor comprises a pin field effect transistor having pins (F1, F2, F3, F4) of a conductive material. An active area is arranged inside the pin of the pin field effect transistor. A contact part is arranged on the active area of the pull up transistor in a first direction. The active area of the pull up transistor is arranged in a second direction.
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