| 摘要 |
PROBLEM TO BE SOLVED: To reduce erroneous writing due to channel isolation of a nonvolatile semiconductor memory device.SOLUTION: An isolation control unit 13A applies an isolation voltage VISO to either of word lines WL1-WLh of a non-selected row such that, when applying a program voltage VPGM, a channel between a bit line BL and a selected row is separated from a channel of the non-selected row; and controls the isolation voltage VISO such that the channel between the bit line BL and the selected row is connected to the channel of the non-selected row, before canceling intermediate voltages VPA and VPB. |
