| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging element preventing light from a slit formed around a pixel part with its structural necessity from entering a semiconductor substrate to prevent deterioration of image quality due to disturbance of a black level caused by the light from the slit, which is likely to occur as a chip size is reduced.SOLUTION: A solid state imaging element includes: a pixel part in which a plurality of sensors for generating signal charges by photoelectric conversion are arranged on a semiconductor substrate; an optical black part as a portion of the pixel part, in which the sensor outputs a signal to be a reference of a black level; a first light-shielding film provided on the pixel part so as to cover at least the optical black part of the pixel part; a wiring part having a wiring layer provided around the pixel part so as to be spaced from the first light-shielding film via a slit-like gap; and a second light-shielding film provided so as to cover the slit-like gap against the semiconductor substrate . |
