发明名称 METHOD OF MANUFACTURING POROUS FILM, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To suppress that a dielectric constant of a porous insulating film increases as time goes by.SOLUTION: First, a porous insulating film 120 is formed using an organic silica material containing a hydrocarbon group. Although the hydrocarbon group contains an unsaturated carbon compound, for example, alternatively, the hydrocarbon group may contain a saturated carbon compound. A skeleton of the organic silica is an annular organic silica, for example. Next, plasma processing of a surface of the porous insulating film 120 is performed using a process gas containing an inert gas and a reducing gas. Further, a wiring groove 123 is formed to the porous insulating film 120, and a wire 124 is embedded in the wiring groove 123.
申请公布号 JP2013143392(A) 申请公布日期 2013.07.22
申请号 JP20120001319 申请日期 2012.01.06
申请人 RENESAS ELECTRONICS CORP 发明人 YAMAMOTO HIROKI;ITO FUMINORI;HAYASHI YOSHIHIRO
分类号 H01L21/316;C23C16/56;H01L21/768;H01L23/522 主分类号 H01L21/316
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