| 摘要 |
PROBLEM TO BE SOLVED: To enhance controllability of an RF bias function, and to enhance reliability of a plasma process by preventing occurrence of undesired resonance on a high frequency transmission path between a counter electrode and a ground potential reliably.SOLUTION: In the capacity coupling plasma processing apparatus, three types of high frequency wave RF, RF, and RFfrom first, second, and third high frequency power supplies 35, 36, and 38 are superposed and applied to a susceptor (lower electrode) 16. In such a 3 frequency superposition application system, the frequency-impedance characteristics on the high frequency transmission path around an upper electrode 48 are contrived, while taking account of all main frequencies related to or affecting the plasma process, thus preventing occurrence of series resonance on the high frequency transmission path. |
