| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for improving a margin of data holding characteristics of an SRAM cell.SOLUTION: A semiconductor device comprises: at least one evaluation cell; a word line level determination circuit for determining a word line level on the basis of time after a control signal changes from one of levels "H" and "L" to the other until the output node of a fourth inverter changes from one of the levels "H" and "L" to the other; and a word line drive circuit. The evaluation cell comprises: a third inverter having third PMOS and NMOSTRS; a fourth inverter having fourth PMOS and NMOSTRS; a third transfer TRS having an end, the other end, and a gate connected to an output node of the third inverter, a first bit line, and a ground power supply, respectively; a fourth transfer TRS having an end, the other end, and a gate connected to an output node of the fourth inverter, a second bit line, and a dummy word line, respectively; and a control circuit connected to a source of the fourth NMOSTRS for controlling potential of the output node of the fourth inverter on the basis of the control signal. |
