发明名称 PLASMA REACTOR WITH TILTABLE OVERHEAD RF INDUCTIVE SOURCE
摘要 Correction of skew in plasma etch rate distribution is performed by tilting the overhead RF source power applicator about a tilt axis whose angle is determined from skew in processing data. Complete freedom of movement is provided by incorporating exactly three axial motion servos supporting a floating plate from which the overhead RF source power applicator is suspended.
申请公布号 KR20130083489(A) 申请公布日期 2013.07.22
申请号 KR20137017437 申请日期 2010.06.11
申请人 APPLIED MATERIALS, INC. 发明人 COLLINS KENNETH S.;NGUYEN ANDREW;SALINAS JEFFREY MARTIN;YOUSIF IMAD;XU MING
分类号 H01L21/3065 主分类号 H01L21/3065
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