发明名称 |
DEVICE MANUFACTURING METHOD AND MANUFACTURING DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a device manufacturing method capable of forming a conductive film by embedding a conductive material in a fine recess provided on one surface of a substrate without any space.SOLUTION: A device manufacturing method is a deposition method comprising at least a first step of forming a barrier film 103 so as to cover at least an inner wall surface 102a of a recess provided on one surface 101a of a substrate 101 with respect to the substrate 101, a second step of forming a conductive film 104 so as to cover the barrier film 103, and a third step of melting the conductive film 104 by a reflow method. This manufacturing method also includes a step α of exposing a substrate in which the barrier film 103 and the conductive film 104 were laminated in this order through the second step in a pressure A atmosphere only for a time B between the second step and the third step. The method controls the step α so that a product of the pressure A and the time B becomes less than or equal to 6×10[Pa s] in the step. |
申请公布号 |
JP2013143442(A) |
申请公布日期 |
2013.07.22 |
申请号 |
JP20120002305 |
申请日期 |
2012.01.10 |
申请人 |
ULVAC JAPAN LTD |
发明人 |
ENDO YOHEI;KODAIRA SHUJI;SAKAMOTO YUTA;HAMAGUCHI JUNICHI;UCHIDA YOHEI;HIGUCHI YASUSHI;NAKAMURA SHINYA;HASHIMOTO KAZUYOSHI;IKEDA YOSHIHIRO;IWASAWA HIROAKI |
分类号 |
H01L21/768;C23C14/34;H01L21/28;H01L21/3205;H01L23/532 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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