发明名称 DEVICE MANUFACTURING METHOD AND MANUFACTURING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a device manufacturing method capable of forming a conductive film by embedding a conductive material in a fine recess provided on one surface of a substrate without any space.SOLUTION: A device manufacturing method is a deposition method comprising at least a first step of forming a barrier film 103 so as to cover at least an inner wall surface 102a of a recess provided on one surface 101a of a substrate 101 with respect to the substrate 101, a second step of forming a conductive film 104 so as to cover the barrier film 103, and a third step of melting the conductive film 104 by a reflow method. This manufacturing method also includes a step α of exposing a substrate in which the barrier film 103 and the conductive film 104 were laminated in this order through the second step in a pressure A atmosphere only for a time B between the second step and the third step. The method controls the step α so that a product of the pressure A and the time B becomes less than or equal to 6×10[Pa s] in the step.
申请公布号 JP2013143442(A) 申请公布日期 2013.07.22
申请号 JP20120002305 申请日期 2012.01.10
申请人 ULVAC JAPAN LTD 发明人 ENDO YOHEI;KODAIRA SHUJI;SAKAMOTO YUTA;HAMAGUCHI JUNICHI;UCHIDA YOHEI;HIGUCHI YASUSHI;NAKAMURA SHINYA;HASHIMOTO KAZUYOSHI;IKEDA YOSHIHIRO;IWASAWA HIROAKI
分类号 H01L21/768;C23C14/34;H01L21/28;H01L21/3205;H01L23/532 主分类号 H01L21/768
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