| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a negative resist pattern having high resolution and good shape and a resist composition.SOLUTION: There are provided a method for forming a resist pattern comprising the steps of: (1) forming a resist film by applying a resist composition containing a base material component whose solubility to an alkali developer is increased by the action of an acid and a compound represented by the general formula (c1) on a substrate; (2) exposing the resist film; (3) performing baking after the step (2); and (4) alkali developing the resist film to form a negative resist pattern in which an unexposed part of the resist film is removed by dissolving, and the resist composition used in the step (1), wherein, Ris a group forming an aromatic ring together with two carbon atoms to which the Ris bonded, Ris a hydrogen atom or a hydrocarbon group, and Ris a hydrogen atom, a carboxyl group or a hydrocarbon group having 1 to 15 carbon atoms. |
