发明名称 POWER SEMICONDUCTOR MODULE, POWER MODULE AND POWER MODULE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To improve heat conductivity and radiation performance of an insulation layer formed of a conductor plate shape.SOLUTION: A power semiconductor module comprises a conductor plate 315 and a module case 304 which are joined by an insulation layer 700. The insulation layer 700 includes a sprayed film 710 and an insulation film 720 provided on the sprayed film 710. The insulation film 720 includes a resin 721 containing a filler 722 such as ceramic and a part of the filler-containing resin is impregnated in a cavity 712 of a thermal spray material 711 which composes the sprayed film 710.
申请公布号 JP2013143439(A) 申请公布日期 2013.07.22
申请号 JP20120002279 申请日期 2012.01.10
申请人 HITACHI AUTOMOTIVE SYSTEMS LTD 发明人 NISHIOKA EIJI;IDE HIDEKAZU;ISHII TOSHIAKI;NAKATSU KINYA;KUSUKAWA JUNPEI;SATO TOSHIYA;ASANO MASAHIKO
分类号 H01L23/36;H01L23/40;H01L25/07;H01L25/18;H02M7/48;H05K7/20 主分类号 H01L23/36
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