High etch resistant hardmask composition having antireflective property with calixarene and Process of producing patterned materials by using the same

摘要

PURPOSE: A hardmask composition is provided to ensure high etching selectivity and enough resistance to multiple etching, and to minimize reflectivity between a resist and a backside layer. CONSTITUTION: A calixarene compound is represented by chemical formulas 1 or 2. An antireflective hard mask composition includes (a) a calixarene compound represented by chemical formulas 1 or 2, (b) initiator, and (c) organic solvent. The calixarene compound has an average molecular weight of 100~30,000. The initiator is one kind selected from the group consisting of peroxide, persulfate, and azo compounds.