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发明名称
化合物半导体成长用基板及磊晶成长方法
摘要
提供一种在化合物半导体层,尤其是使A1系化合物半导体层磊晶成长之际,用以抑制产生与小丘状缺陷不同形式之表面缺陷之有效的成长用基板。在相对于(100)面,以特定之偏移角呈倾斜的结晶面为主面之化合物半导体成长用基板中,将主面之法线向量投影于(100)面之向量方向,与〔0-11〕方向、〔01-1〕方向、〔011〕方向或〔0-1-1〕方向之任一方向所成的角度,为35。以下之方式,使化合物半导体层在该成长用基板上磊晶成长。
申请公布号
TWI402896
申请公布日期
2013.07.21
申请号
TW096103714
申请日期
2007.02.01
申请人
日鑛金属股份有限公司 日本
发明人
栗田英树;平野立一
分类号
H01L21/205;C30B25/18;C30B29/40
主分类号
H01L21/205
代理机构
代理人
林志刚 台北市中山区南京东路2段125号7楼
主权项
地址
日本
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