<p>PURPOSE: An integrated circuit device is provided to supply an electrical connection structure with high reliability and stability by using a TSV contact pattern. CONSTITUTION: An interlayer dielectric layer (114) is formed on a substrate (102). A wiring layer (156) is formed on the interlayer dielectric layer. A TSV contact pattern is extended from the inner side to the outer side of a via hole (130) passing through the interlayer dielectric layer and the substrate. The TSV contact pattern includes an inner plug part and an outer pad part which protrudes from the backside of the substrate to the outside. The outer pad part becomes narrow according as the outer pad part becomes distant from the backside of the substrate.</p>
