METHOD FOR CLEAVING SEMICONDUCTOR WAFERS

摘要

PURPOSE: A wafer cleaving method is provided to reduce the difficulty of a separation layer forming process by forming a separation layer to include a plurality of microvoids. CONSTITUTION: A plurality of trenches are formed on a first wafer (11). A plurality of microvoids (12A) are formed from the trenches by a thermal process to induce migration. The thermal process is performed under a hydrogen atmosphere between 700 and 1400 degrees centigrade. The first wafer with a separation layer (100) including the microvoids is bonded to a second wafer. The first wafer is separated from the second wafer by a cleaving process.