Method for manufacturing semiconductor substrate used for manufacturing transistor, involves utilizing substrate layer to present thermal dilation coefficient near to that of semiconductor and additional semiconductor layers

摘要

The method involves forming a composite substrate layer (310) on a surface of a semiconductor layer (230). A metal contact layer is formed on the surface. The substrate layer is formed on the metal layer whose side is relative to the semiconductor layer. An additional semiconductor layer is epitaxially developed over the semiconductor layer whose side is relative to the substrate layer. The substrate layer is used to present a thermal dilation coefficient near to that of the semiconductor layer and the additional semiconductor layer. An independent claim is also included for a semiconductor structure.