NITRIDE SOLAR CELL AND FABRICATION THEREOF

摘要

PURPOSE: A nitride solar cell and a fabrication thereof are provided to easily control the wavelength band for absorbing solar energy by adjusting the thickness of an InGaN film to control sub band energy levels. CONSTITUTION: A first nitride semiconductor layer (210) has a first energy level. A second nitride semiconductor layer (240) has a second energy level. The energy level of a barrier layer (230) is higher than the energy level of the first energy level and the second energy level. An active layer (220) is formed between the barrier layer and the second nitride semiconductor layer. Sunlight generates holes and electrons in the active layer.