| 摘要 |
PURPOSE: A bipolar junction transistor is provided to save manufacturing costs by reducing the total area of the bipolar junction transistor. CONSTITUTION: Each of a first and a second transistor (T1,T2) includes an emitter (E1,E2), a base, and a collector. The base surrounds the emitter. The collector surrounds the base. The first transistor includes a P-well (11) functioning as the base, an N+ junction (12) functioning as the emitter, and a deep N-well (13) functioning as the collector. The second transistor includes a P-well (21) functioning the base, an N+ junction (22) functioning as the emitter, and a deep N-well (23) functioning as the collector.
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