| 摘要 |
<p>PURPOSE: A semiconductor memory device, a memory chip, a memory module, a memory system, and a method for manufacturing the semiconductor memory device are provided to easily control a contact area between a conductive line and a memory film even through integration is increased. CONSTITUTION: A plurality of first conductive lines (120) are formed on a substrate (110). An insulation layer (130) is formed on the substrate including the first conductive lines. A trench (230) exposing the sidewall of the first conductive line is formed. A memory film (140) is formed on the exposed sidewall of the first conductive line. A plurality of second conductive lines (170) which are partially buried in the trench are formed.</p> |
