A semiconductor device is disclosed that has enhanced its electric charge resistance. A first parallel p-n layer is disposed in an element activating part, and a second parallel p-n layer is disposed in an element peripheral edge part. An n- surface area is disposed between the second parallel p-n layer and a first principal face. Two or more p-type guard ring areas are disposed so as to be separate from each other on the first principal face side of the n- surface area. First field plate electrodes and second field plate electrodes are electrically connected to p-type guard ring areas. Second field plate electrodes cover the first field plate electrodes adjacent to each other so as to cover the first principal face between the first field plate electrodes through a second insulating film.
