| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device capable of being manufactured with ease, having a high reliability, and performing high-frequency modulation.SOLUTION: A semiconductor laser device comprises: a diffraction grating formed on a substrate; a lower clad layer formed on the diffraction grating; an active layer formed on the lower clad layer in a first region; an upper clad layer of the first region formed on the active layer; an optical guide layer formed on the lower clad layer in a second region adjacent to the first region; and an upper clad layer of the second region formed on the optical guide layer. Laser light is emitted by flowing a current in the active layer. The optical guide layer is formed of a material transmitting the laser light. A thickness of the upper clad layer of the second region is thinner than that of the upper clad layer of the first region. The above subject is resolved by this semiconductor laser device. |
