MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE, AND PROGRAM

摘要

PROBLEM TO BE SOLVED: To allow for deposition of a thin film having characteristics such as a low dielectric constant, high etching resistance, and high leak resistance, and also to allow for improvement of productivity for deposition.SOLUTION: A manufacturing method for a semiconductor device includes a step of forming a thin film including a prescribed element on a substrate by performing a cycle including the following steps repeatedly: forming a first layer including the prescribed element, nitrogen, and carbon by alternately performing a first step of supplying a material gas containing the prescribed element and a halogen element to the substrate and a second step of supplying a first reaction gas which is composed of three elements of carbon, nitrogen, and hydrogen to the substrate and in which the number of carbon atoms is greater than the number of nitrogen atoms in a composition formula; modifying the first layer to form a second layer by supplying the material gas and a second reaction gas different from the first reaction gas to the substrate (step 3); and modifying a surface of the second layer by supplying a hydrogen-containing gas to the substrate (step 4).