发明名称 |
METHOD OF MAKING A NON-VOLATILE DOUBLE GATE MEMORY CELL |
摘要 |
A method of making a non-volatile double-gate memory cell. A gate of the control transistor is formed with a relief on a substrate. A control gate of the memory transistor is formed with a layer of a semiconductor material covering relief. The method includes chemical mechanical polishing (CMP) so as to strip, above the relief another layer and part of the layer of a semiconductor material; stripping of the remaining other layer on both sides of the relief, etching of the layer of a semiconductor material so as to strip this material above the relief and to leave only a pattern on at least one sidewall of the relief.
|
申请公布号 |
US2013181273(A1) |
申请公布日期 |
2013.07.18 |
申请号 |
US201313736578 |
申请日期 |
2013.01.08 |
申请人 |
AUX ENE ALT COMMISSARIAT A L'ENERGIE ATOMIQUE ET;COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT |
发明人 |
CHARPIN-NICOLLE CHRISTELLE |
分类号 |
H01L29/66;H01L29/788 |
主分类号 |
H01L29/66 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|