APPARATUS FOR PRODUCING SINGLE CRYSTAL, SINGLE CRYSTAL, METHOD FOR PRODUCING THE SINGLE CRYSTAL, WAFER, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide: an apparatus for producing a single crystal, wherein a long single crystal that is less likely to cause flaws and cracks can be produced without increasing a processing cost and processing time: a method for producing the single crystal using the apparatus; and the single crystal and a wafer, both being produced by using such method.SOLUTION: A temperature gradient-controlling member 26a is arranged around a seed crystal 4, and then a local temperature gradient-relieving member 28a is arranged between the seed crystal 4 and the temperature gradient-controlling member 26a, wherein the local temperature gradient-relieving member has a function of relieving a maximal value of a temperature gradient caused in a region right above a growth axis direction of the seed crystal 4 in a single crystal 6 growing right above the seed crystal 4. The temperature gradient-controlling member 26a is arranged around the seed crystal 4 or the single crystal 6 so that, in a predetermined term from when at least the single crystal 6 starts growing till when the single crystal ends the growing, a temperature gradient may occur in which: a heat flows from the outside of the single crystal 6 toward the inside thereof in the vicinity of a growth face side of the single crystal 6; and the heat is released from the inside of the single crystal 6 toward the outside thereof in the vicinity of a seed crystal 4 side of the single crystal 6.