NONVOLATILE MEMORY DEVICE, OPERATION METHOD OF THE SAME AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile memory device, an operation method of the same and a manufacturing method of the same.SOLUTION: A nonvolatile memory device according to a present embodiment comprises: a plurality of channel structures formed on a substrate and each including a plurality of interlayer insulation layers and a plurality of channel layers, which are alternately stacked; first and second vertical gates alternately arranged between the channel structures along one direction crossing the channel structures and contacting the plurality of channel layers sandwiching memory films, respectively; and a pair of first and second word lines arranged above or under the channel structures and extending in the one direction so as to overlap a row of the first and second vertical gates arranged along the one direction. The first word line is connected with the first vertical gates and the second word line is connected with the second vertical gates.