| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of improving controllability of a residual film thickness of a silicon oxide film on a fuse element.SOLUTION: A method of manufacturing a semiconductor device includes the following steps of: forming a fuse element 10 on a semiconductor substrate 1 via an interlayer insulating film 3; forming a silicon oxide film 20 on the interlayer insulating film 3 so as to cover the fuse element 10; forming a silicon nitride film 30 on the silicon oxide film 20; and partially removing only the silicon nitride film 30 by etching to form above the fuse element 10 an opening 35 for laser trimming using the silicon oxide film 20 as a bottom face. At the time when an etching gas or an etchant reaches a surface of the silicon oxide film 20, the progress of etching processing for forming the opening 35 is suppressed. Accordingly, an initial film thickness of the silicon oxide film 20 becomes a residual film thickness of the silicon oxide film 20 at the bottom face of the opening 35 almost as it is. |
