| 摘要 |
A method of fabricating a memory device comprises forming a plurality of first insulative blocks and a plurality of second insulative blocks arranged in an alternating manner in a substrate, forming a plurality of wide trenches in the substrate to form a plurality of protruding blocks, forming a word line on each sidewall of the protruding blocks, isolating the word line on each sidewall of the protruding block, and forming an trench filler in the protruding block to form two mesa structures, wherein the first insulative block and the second insulative block have different depths, and the wide trenches are transverse to the first insulative blocks.
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