| 摘要 |
PURPOSE: A manufacturing method of a silicon nano-wire having a rough surface is provided to manufacture silicon nano-wires having wide surface areas by producing stacking fault in outer part of the silicon nano-wire. CONSTITUTION: A manufacturing method of a silicon nano-wire having a rough surface comprises next steps: washing silicon wafer(s100); evaporating metal catalyst on surface of the silicon wafer(s110); and growing the silicon nano-wire by evaporating diluted monosilane gas(SiH4) on surface of metal catalyst material which is evaporated on surface of the silicon wafer(s130). The metallic catalyst material is one of the following: Au, Cu, Ni, and Mn. The last step comprises next steps: locating the silicon wafer within an electrochemical vapor deposition apparatus; maintaining the set temperature of the electrochemical vapor deposition apparatus; and growing the silicon nano-wire for the set hours by injecting diluted monosilane gas. |
