| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-silicon-based semiconductor thin film usable in a thin-film transistor, and a sputtering target for forming the same; and a thin-film transistor using a new non-silicon-based semiconductor thin film.SOLUTION: This oxide sintered body is configured such that: gallium is solid-solved in indium oxide, the atomic ratio Ga/(Ga+In) is 0.001-0.12, the content rate of indium and gallium to total metal atoms is 80 atom% or more, the oxide sintered body has a bixbyte structure of InO, one or two or more kinds of oxide selected from yttrium oxide, scandium oxide, aluminum oxide and boron oxide are added, where the aluminum oxide is added by 0.01 atom% or more in terms of metal atom. |
