INDIUM SPUTTERING TARGET, AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an indium sputtering target with which a short period of time is required for the stabilization of the film formation rate after initiating sputtering.SOLUTION: The indium sputtering target has an arithmetic mean roughness Ra of 5 μm to 70 μm on the surface thereof that is to be sputtered.