| 摘要 |
A method for manufacturing a conversion device is provided. Formed are an insulating layer that covers at least conversion portion is formed; a protection layer for suppressing formation of a metal-semiconductor compound layer, at a position where the protection layer covers the conversion portion via the insulating layer, covers at least part of an element isolation region, and exposes a transistor; and a metal film on the protection layer and the transistor. A metal-semiconductor compound layer on the transistor by performing heating process is formed. Metal that has not been reacted by the heating process is removed from the substrate. After that, an upper side in portions of the protection layer covering the conversion portion and the at least part of the element isolation region are removed.
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