Methods of Forming a Gate Cap Layer Above a Replacement Gate Structure and a Semiconductor Device That Includes Such a Gate Structure and Cap Layer

摘要

Disclosed herein are various methods of forming a gate cap layer above a replacement gate structure, and a device having such a cap layer. In one example, a device disclosed herein includes a replacement gate structure having a dished upper surface, sidewall spacers positioned proximate the replacement gate structure and a gate cap layer positioned above the replacement gate structure, wherein the gate cap layer has a bottom surface that corresponds to the dished upper surface of the replacement gate structure.