发明名称 |
METHOD FOR FORMING N-SHAPED BOTTOM STRESS LINER |
摘要 |
Semiconductor devices with n-shaped bottom stress liners are formed. Embodiments include forming a protuberance on a substrate, conformally forming a sacrificial material layer over the protuberance, forming a gate stack above the sacrificial material layer on a silicon layer, removing the sacrificial material layer to form a tunnel, and forming a stress liner in the tunnel conforming to the shape of the protuberance. Embodiments further include forming a silicon layer over the sacrificial material layer and lining the tunnel with a passivation layer prior to forming the stress liner.
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申请公布号 |
US2013181260(A1) |
申请公布日期 |
2013.07.18 |
申请号 |
US201213348771 |
申请日期 |
2012.01.12 |
申请人 |
YANG XIAODONG;LIU YANXIANG;VAKADA VARA GOVINDESWARA REDDY;LIU JINPING;DAI MIN;GLOBALFOUNDRIES SINGAPORE PTE. LTD.;INTERNATIONAL BUSINESS MACHINES CORPORATION;GLOBALFOUNDRIES INC. |
发明人 |
YANG XIAODONG;LIU YANXIANG;VAKADA VARA GOVINDESWARA REDDY;LIU JINPING;DAI MIN |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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