发明名称 ORGANIC FLOATING GATE MEMORY DEVICE HAVING PROTEIN AND METHOD OF FABRICATING THE SAME
摘要 An organic floating gate memory device having protein and a method of fabricating the same are disclosed. The organic floating gate memory device of the present invention comprises: a substrate; a gate electrode on the substrate; a gate dielectric layer covering the gate electrode; a floating gate on the gate dielectric layer; a protein dielectric layer covering the floating gate; and an organic semiconductor layer, a source and a drain, wherein the organic semiconductor layer, the source and the drain are disposed over the protein dielectric layer
申请公布号 US2013181192(A1) 申请公布日期 2013.07.18
申请号 US201213572997 申请日期 2012.08.13
申请人 HWANG JENN-CHANG;TSAI LI SHIUAN;GAN JON-YIEW 发明人 HWANG JENN-CHANG;TSAI LI SHIUAN;GAN JON-YIEW
分类号 H01L51/30;H01L51/40 主分类号 H01L51/30
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