发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor device includes a semiconductor layer; a first type of a first semiconductor element that is arranged in a first element region of the semiconductor layer, has first and second main electrodes, and switches current; and a second type of a second semiconductor element that is arranged in a second element region of the semiconductor layer, has third and fourth main electrodes, and freewheels the current. The first and second element regions are adjacent in a direction orthogonal to a direction in which current flows, and are formed in a loop shape over the entire element region when the semiconductor layer is viewed from above. The first main electrode is electrically connected to the third main electrode, and the second main electrode is electrically connected to the fourth main electrode. When the semiconductor layer is viewed from above, a ratio of a length of the first main electrode to a length of the second main electrode is larger than a ratio of a length of the third main electrode to a length of the fourth main electrode.
申请公布号 US2013181252(A1) 申请公布日期 2013.07.18
申请号 US201113876170 申请日期 2011.09.26
申请人 EGUCHI HIROOMI;ONOGI ATSUSHI;OKAWA TAKASHI;HAYAKAWA KIYOHARU 发明人 EGUCHI HIROOMI;ONOGI ATSUSHI;OKAWA TAKASHI;HAYAKAWA KIYOHARU
分类号 H01L29/06 主分类号 H01L29/06
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