发明名称 |
MEMORY CELL OF SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING THE SAME |
摘要 |
A semiconductor memory device includes a first fuse having one end coupled with a first bit line and configured to be programmed with a data, a second fuse having one end coupled with a second bit line and configured to be programmed with the data; a program controller coupled with the other ends of the first fuse and the second fuse and configured to perform a program operation on at least one of the first fuse and the second fuse in response to a program voltage, and a read controller coupled with the other ends of the first fuse and the second fuse and configured to perform a read operation on the first fuse and the second fuse in response to a read voltage. |
申请公布号 |
US2013182518(A1) |
申请公布日期 |
2013.07.18 |
申请号 |
US201213461186 |
申请日期 |
2012.05.01 |
申请人 |
KIM TAE-HOON;KIM SUNG-MOOK |
发明人 |
KIM TAE-HOON;KIM SUNG-MOOK |
分类号 |
G11C29/00;G11C7/12;G11C17/16 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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