| 摘要 |
In an example embodiment, an integrated circuit (IC) comprises a substrate separating one of a source and drain from a semiconductor region. The IC comprises a vertical transistor including the source or drain. A gate electrode is formed in a trench extending into the semiconductor region; the gate electrode is electrically insulated from the semiconductor region by a dielectric lining in the trench and the other of said source or drain in the semiconducting region. An insulating trench terminates the vertical transistor; a vertical capacitor region (V-Cap) is adjacent to the vertical transistor; a first capacitor plate of the V-Cap comprises the source or drain separated from the semiconductor region by the substrate; the V-Cap further comprises at least one trench extending into the semiconductor region; the at least one trench comprises an electrically insulating liner material insulating a conductive material defining a second capacitor plate separated from the first capacitor plate. |
