| 摘要 |
An embodiment of the present invention provides a TFT array substrate comprising: a base substrate (1) and thin film transistors. The thin film transistor comprises a gate electrode (2), a semiconductor layer (5), a semiconductor protective layer, a source electrode (8) and a drain electrode (9). The semiconductor protective layer is disposed adjacent to the semiconductor layer (5) and comprises a composite lamination structure, which comprises a protective layer formed of an insulating material capable of preventing de-oxygen of the semiconductor layer (5) and an insulating layer formed of an insulating material to be etched more easily. |
