SEMICONDUCTOR SUBSTRATE, THIN FILM TRANSISTOR, SEMICONDUCTOR CIRCUIT, LIQUID CRYSTAL DISPLAY APPARATUS, ELECTROLUMINESCENT APPARATUS, SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, AND SEMICONDUCTOR SUBSTRATE MANUFACTURING APPARATUS

摘要

In a semiconductor substrate (40), an interval (A) at which a plurality of Si thin films (16) are disposed on an insulating substrate (30) by being spaced apart from each other is smaller than 5 mm but larger than a difference between an insulating substrate elongation amount that corresponds to the interval (A), and an elongation amount of one Si wafer (10), said elongation amounts being obtained when a temperature is changed to 600°C from a room temperature. Consequently, a region having a uniform film thickness is increased, said region being a part of each of the semiconductor thin films disposed on the insulating substrate, and breaking and chipping of the disposed semiconductor layers and the insulating substrate due to heat are eliminated.