OXIDE THIN FILM TRANSISTOR AND METHOD FOR PREPARING SAME

摘要

The embodiments of the present invention provide an oxide thin film transistor and a method for preparing the same. The oxide thin film transistor comprises: a base plate; a grid electrode formed on the base plate; a grid insulation layer covering the grid electrode; an active oxide layer formed on the grid insulation layer and comprising a source region, a drain region and a channel between the source region and the drain region; an etching barrier covering the entire surface of the active layer and the grid insulation layer; and a source electrode and a drain electrode formed on the etching barrier and provided on the two sides of the channel, respectively. The etching barrier is a metal layer. The thin film transistor also comprises a channel protection layer, the channel protection layer being a non-conductive oxidation layer converted from the metal layer after oxidizing the metal layer.