| 摘要 |
A high-purity copper sputtering target characterized in that the flange part of the target has a Vickers hardness in the range of 90-100 Hv, the central erosion part of the target has a Vickers hardness in the range of 55-70 Hv, and the erosion part has a crystal grain diameter of 80 µm or smaller. This high-purity copper sputtering target need not be bonded to a backing plate (BP). Since the flange part of the target has enhanced strength (hardness) to reduce the amount of warpage of the target, a thin film having excellent evenness (uniformity) can be formed therefrom. Furthermore, the erosion part and flange part of the target are each made to have a regulated degree of (111) orientation to improve the evenness of film thickness. |
