| 摘要 |
PROBLEM TO BE SOLVED: To eliminate increase of complexity and cost in the overall process of known photodiode fabrication processes for forming devices for particular applications, such as detectors with integrated photodiode/readout electronic circuit fabrication on both sides of a wafer for imaging systems.SOLUTION: Photodiode arrays and methods of fabrication are provided. One photodiode array includes a silicon wafer having a first surface and an opposite second surface, and a plurality of conductive vias penetrating through the silicon wafer. The photodiode array further includes a patterned doped epitaxial layer on the first surface. The patterned doped epitaxial layer and the substrate form a plurality of diode junctions. A patterned etching defines an array of the diode junctions. |
