发明名称 |
LOGIC GATE AND A CORRESPONDING METHOD OF FUNCTION |
摘要 |
A logic gate (1) comprising a spintronic memristor device (2), which has two spin-polarized magnetic electrodes (3, 4) for injecting and/or receiving a spin-polarized current and a layer of material (5) interposed between the two electrodes (3, 4) for transporting the spin-polarized current from one electrode to the other. The layer of material (5) is composed of a layer of organic semiconductor that is able to endow the spintronic memristor device (2) with at least two non-volatile electrical resistance states (RH, RL), each of which can be selected by applying a voltage to the electrodes (3, 4) that reaches or exceeds a respective voltage threshold (VT1, VT2) and, in at least a first resistance state (RH) of which, the spintronic memristor device (2) does not present a magnetoresistive effect., |
申请公布号 |
WO2013050983(A3) |
申请公布日期 |
2013.07.18 |
申请号 |
WO2012IB55393 |
申请日期 |
2012.10.05 |
申请人 |
CONSIGLIO NAZIONALE DELLE RICERCHE |
发明人 |
DEDIU, VALENTIN, ALEK;PREZIOSO, MIRKO;RIMINUCCI, ALBERTO;BERGENTI, ILARIA;GRAZIOSI, PATRIZIO |
分类号 |
G11C11/16;G11C13/00;H01L27/24 |
主分类号 |
G11C11/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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