| 摘要 |
A semiconductor voltage transformation structure is provided. The semiconductor voltage transformation structure includes: a first electrode layer; an electricity-to-light conversion layer formed on the first electrode layer; a second electrode layer formed on the electricity-to-light conversion layer; a first isolation layer formed on the second electrode layer; a third electrode layer formed on the first isolation layer; a light-to-electricity conversion layer formed on the third electrode layer; and a fourth electrode layer formed on the light-to-electricity conversion layer, in which the first isolation layer, the second electrode layer and the third electrode layer are transparent to a working light emitted by the electricity-to-light conversion layer.
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