| 摘要 |
The invention relates to an optical system for a microlithographic projection exposure apparatus, and to a microlithographic exposure method. An optical system for a microlithographic projection exposure apparatus comprises a polarization-influencing optical arrangement (100, 200, 250), wherein the polarization-influencing optical arrangement (100, 200, 250) comprises at least one first array (110, 210, 260) of first polarization-influencing elements (110a, 110b, 110c,...; 310a, 310b, 310c,...; 410a, 410b, 410c,...; 510a;...) and a second array (120, 220, 270) of second polarization-influencing elements (120a, 120b, 120c,...), wehrein the first and second arrays are arranged successively in the light propogation direction, wherein the first and second polarization-influencing elements in each case have a birefringence that is dependent on the presence of an electric field, and wherein the first polarization-influencing elements (110a, 110b, 110c,...; 310a, 310b, 310c,...; 410a, 410b, 410c,...; 510a;...) and the second polarization-influencing elements (120a, 120b, 120c,...) are transverse Pockels cells. |
