发明名称 METHOD FOR PRODUCING SILICON-CONTAINING FILM AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE
摘要 <p>This method for producing a silicon-containing film (1) comprises: a first step wherein the inside of a chamber (2) is dry cleaned with use of a fluorine-containing gas; a second step wherein a substrate (10) is brought into the chamber (2); a third step wherein the inside of the chamber (2) is purged with a silane-based gas, while having the substrate (10) held within the chamber (2); and a fourth step wherein a silicon-containing film (1) is formed on the substrate (10) after the third step.</p>
申请公布号 WO2013105416(A1) 申请公布日期 2013.07.18
申请号 WO2012JP83204 申请日期 2012.12.21
申请人 SHARP KABUSHIKI KAISHA;NASUNO, YOSHIYUKI;TOMYO, ATSUSHI 发明人 NASUNO, YOSHIYUKI;TOMYO, ATSUSHI
分类号 H01L21/205;C23C16/44;H01L31/04 主分类号 H01L21/205
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