发明名称 FILM DEPOSITION APPARATUS
摘要 A film deposition apparatus deposits a thin film on a substrate by repeating a cycle of supplying plural kinds of process gases that react with each other in a vacuum chamber. The film deposition apparatus includes a turntable to hold a substrate thereon and to rotate the substrate, and a plurality of process gas supplying parts. At least one of the process gas supplying parts extends from the center to the periphery and is formed as a gas nozzle including gas discharge holes. The gas discharge holes are formed along a length direction of the gas nozzle. The film deposition apparatus also includes current plates provided on upstream and downstream sides in a rotational direction of the turntable and extending along the length direction of the gas nozzle, and having at least one bent section bent downward from an outer edge of the current plates.
申请公布号 US2013180452(A1) 申请公布日期 2013.07.18
申请号 US201313742697 申请日期 2013.01.16
申请人 TOKYO ELECTRON LIMITED;TOKYO ELECTRON LIMITED 发明人 KATO HITOSHI;NAKATSUBO TOSHIYUKI;MIURA SHIGEHIRO
分类号 C23C16/458 主分类号 C23C16/458
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