发明名称 |
DECOUPLING CAPACITOR AND METHOD OF MAKING SAME |
摘要 |
A device comprises a semiconductor substrate having first and second implant regions and an electrode above and between the first and second implant regions of a first dopant type. A contact structure is in direct contact with the first and second implant regions and the electrode. A third implant region has a second dopant type different from the first dopant type. A bulk contact is provided on the third implant.
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申请公布号 |
US2013181269(A1) |
申请公布日期 |
2013.07.18 |
申请号 |
US201213349723 |
申请日期 |
2012.01.13 |
申请人 |
CHEN CHUNG-HUI;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHEN CHUNG-HUI |
分类号 |
H01L29/94;H01L21/02 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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